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AC Recombination Velocity in the Back Surface of a Lamella Silicon Solar Cell under Temperature
Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal
Laboratory of Sciences and Techniques of Water and Environment, Polytechnic School of Thiès, Thiès, Senegal
University Assane SECK, Ziguinchor, Senegal
Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal
Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal
Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal
Laboratory of Sciences and Techniques of Water and Environment, Polytechnic School of Thiès, Thiès, Senegal
Laboratory of Sciences and Techniques of Water and Environment, Polytechnic School of Thiès, Thiès, Senegal
Laboratory of Sciences and Techniques of Water and Environment, Polytechnic School of Thiès, Thiès, Senegal
Laboratory of Sciences and Techniques of Water and Environment, Polytechnic School of Thiès, Thiès, Senegal
University Assane SECK, Ziguinchor, Senegal
- 1 Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal
- 2 Laboratory of Sciences and Techniques of Water and Environment, Polytechnic School of Thiès, Thiès, Senegal
- 3 University Assane SECK, Ziguinchor, Senegal
- 4 Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal
- 5 Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal
- 6 Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal
- 7 Laboratory of Sciences and Techniques of Water and Environment, Polytechnic School of Thiès, Thiès, Senegal
- 8 Laboratory of Sciences and Techniques of Water and Environment, Polytechnic School of Thiès, Thiès, Senegal
- 9 Laboratory of Sciences and Techniques of Water and Environment, Polytechnic School of Thiès, Thiès, Senegal
- 10 Laboratory of Sciences and Techniques of Water and Environment, Polytechnic School of Thiès, Thiès, Senegal
- 11 University Assane SECK, Ziguinchor, Senegal
Journal of Modern Physics·Volume 10 (2019)·Pages 1235–1246·Published 27 August 2019·DOI10.4236/jmp.2019.1010082
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Abstract
The ac recombination velocity of the excess minority carriers, in the back surface of a silicon solar cell with a vertical junction connected in series, is developed through Einstein’s law giving the diffusion coefficient of minority carriers according to temperature, through mobility. The frequency spectrum of both, amplitude and phase, are produced for the diffusion coefficient and the recombination velocity in the rear face, in order to identify the parameters of equivalent electric models.
KeywordsVertical Multi-JunctionsSolar CellAC Back Surface Recombination VelocityTemperatureBode and Nyquist Diagrams
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