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Influence of Both Magnetic Field and Temperature on Silicon Solar Cell Base Optimum Thickness Determination
Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal
University Institute of Technology, University of Thiès, Thiès, Sénégal
Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal
Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal
Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal
Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal
Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal
Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal
Ecole Polytechnique de Thiès, Thiès, Sénégal
Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal
- 1 Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal
- 2 University Institute of Technology, University of Thiès, Thiès, Sénégal
- 3 Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal
- 4 Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal
- 5 Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal
- 6 Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal
- 7 Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal
- 8 Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal
- 9 Ecole Polytechnique de Thiès, Thiès, Sénégal
- 10 Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal
Journal of Modern Physics·Volume 10 (2019)·Pages 1596–1605·Published 5 November 2019·DOI10.4236/jmp.2019.1013105
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Abstract
The minority carrier’s recombination velocity at the junction and at the back surface is used for the modeling and determination of the optimum thickness of the base of a silicon solar cell in the static regime, under magnetic field and temperature influence. This study takes into account the Umklapp process and the Lorentz effect on the minority carriers photogenerated in the base.
KeywordsSilicon Solar CellDiffusion CoefficientSurface Recombination VelocityOptimum Base ThicknessLorentz and Umklapp Processes
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