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Comparison of Epitaxial and Textured Ferroelectric BaTiO<sub>3</sub> Thin Films

¹ Université de Lyon, Ecole Centrale de Lyon, Institut des Nanotechnologies de Lyon, CNRS UMR, Ecully Cedex, France
² Université de Lyon, INSA de Lyon, Institut des Nanotechnologies de Lyon, CNRS UMR, Villeurbanne Cedex, France
³ Université de Lyon, Ecole Centrale de Lyon, Institut des Nanotechnologies de Lyon, CNRS UMR, Ecully Cedex, France
⁴ Université de Lyon, Ecole Centrale de Lyon, Institut des Nanotechnologies de Lyon, CNRS UMR, Ecully Cedex, France
⁵ Université de Lyon, Ecole Centrale de Lyon, Institut des Nanotechnologies de Lyon, CNRS UMR, Ecully Cedex, France

Journal of Modern Physics·Volume 11 (2020)·Pages 509–516·Published 25 March 2020·DOI10.4236/jmp.2020.114033

Abstract

The properties of BaTiO 3 (BTO) thin films deposited on different substrates by RF magnetron sputtering were investigated. Two representative substrates were selected and different heterostructures were studied. 1) SrTiO 3 (STO) single crystals as a bulk oxide reference material, and 2) silicon as a semiconductor. SrRuO 3 (SRO) and Pt bottom electrodes were deposited on the silicon substrate. The BTO structural characterizations show that all the films have (001) crystallographic orientation. We have compared the electrical properties of the different samples: the same dielectric constant and polarization values were obtained independently of the nature of the substrate.

KeywordsFerroelectricBarium TitanateThin FilmSiliconSputteringEpitaxy

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Comparison of Epitaxial and Textured Ferroelectric BaTiO<sub>3</sub> Thin Films

Abstract

References (26)