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Study of CdZnTeSe Gamma-Ray Detector under Various Bias Voltages
Department of Mechanical & Civil Engineering, and Construction Management, Alabama A&M University, Huntsville, AL, USA
Nuclear Engineering and Radiological Science Center, Alabama A&M University, Huntsville, AL, USA
Department of Nonproliferation and National Security, Brookhaven National Laboratory, Upton, NY, USA
Biological and Environmental Sciences Department, Alabama A&M University, Huntsville, AL, USA
Biological and Environmental Sciences Department, Alabama A&M University, Huntsville, AL, USA
Department of Physics, Chemistry and Mathematics, Alabama A&M University, Huntsville, AL, USA
Science and Technology Directorate, Savannah River National Laboratory, Aiken, SC, USA
Department of Electrical Engineering and Computer Science, Alabama A&M University, Huntsville, AL, USA
- 1 Department of Mechanical & Civil Engineering, and Construction Management, Alabama A&M University, Huntsville, AL, USA
- 2 Nuclear Engineering and Radiological Science Center, Alabama A&M University, Huntsville, AL, USA
- 3 Department of Nonproliferation and National Security, Brookhaven National Laboratory, Upton, NY, USA
- 4 Biological and Environmental Sciences Department, Alabama A&M University, Huntsville, AL, USA
- 5 Biological and Environmental Sciences Department, Alabama A&M University, Huntsville, AL, USA
- 6 Department of Physics, Chemistry and Mathematics, Alabama A&M University, Huntsville, AL, USA
- 7 Science and Technology Directorate, Savannah River National Laboratory, Aiken, SC, USA
- 8 Department of Electrical Engineering and Computer Science, Alabama A&M University, Huntsville, AL, USA
Materials Sciences and Applications·Volume 11 (2020)·Pages 553–559·Published 4 August 2020·DOI10.4236/msa.2020.118036
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Abstract
Cadmium zinc telluride selenide (CdZnTeSe) is a new semiconductor material for gamma-ray detection and spectroscopy applications at room temperature. It has very high crystal quality compared to similar materials such as cadmium telluride and cadmium zinc telluride. The consistency of peak position in radiation detection devices is important to practical applications. In this paper, we have characterized a CdZnTeSe planar detector for bias voltages in the range of -20 V to -200 V and amplifier shaping time of 2, 3 and 6 μs. The peak position of the 59.6-keV gamma line of 241 Am becomes more stable as the absolute value of the applied voltage increases. The best energy resolution of 8.5% was obtained for the 59.6-keV gamma peak at -160 V bias voltage and 3-μs shaping time. The energy resolution was relatively stable in the -120 V to -200 V range for a 6-μs shaping time. Future work will be focused on the study of the peak position and energy resolution over time.
KeywordsCdZnTeSeEnergy ResolutionEnergy-Peak StabilityGamma-Ray SpectroscopyNuclear Detectors
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