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Nonequilibrium Diffusion of Boron in SiC at Low Temperatures
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Materials Sciences and Applications·Volume 01 (2010)·Pages 53–58·Published 30 June 2010·DOI10.4236/msa.2010.12010
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Abstract
Nonequilibrium diffusion of Boron in 3C SiC was performed using a flow of carbon vacancies. The temperature of diffusion was 1150-1250℃ and concentration of Boron in doped area reached about 1019 to 1020 cm-3. It is shown that after thermal annealing in vacuum the characteristics of fabricated structures are close to those of the structures made by the conventional technology.
KeywordsDiffusionActivation EnergySilicone CarbideAnnealingVacancy
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