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Optoelectronic Properties of GaN-Based Light-Emitting Diodes with Different Mesa Structures

¹ College of Physics & Technology, Yangzhou University, Yangzhou, China
² College of Physics & Technology, Yangzhou University, Yangzhou, China
³ College of Physics & Technology, Yangzhou University, Yangzhou, China
⁴ College of Physics & Technology, Yangzhou University, Yangzhou, China
⁵ College of Physics & Technology, Yangzhou University, Yangzhou, China

Materials Sciences and Applications·Volume 03 (2012)·Pages 838–842·Published 13 December 2012·DOI10.4236/msa.2012.312122

Abstract

GaN/InGaN lighting-emitting diodes with different mesa structures are studied. The current-voltage characteristics, light output power, luminous efficiency, and peak wavelength of the GaN/InGaN lighting-emitting diodes with different mesa patterns are compared. It shows that the current-voltage characteristics of the chips with more mesa areas are im- proved greatly by reducing the current crowding. With higher injection current the light output powers of GaN-based LED with more mesa areas are enhanced. And the chips with more P-electrode area have a smaller red shift and a little bit blue shift due to the reduction of the current crowding.

KeywordsGaN-Based LedsMesa StructureOptoelectronic Properties

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Optoelectronic Properties of GaN-Based Light-Emitting Diodes with Different Mesa Structures

Abstract

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