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Heterostructure Solar Cells Based on Sol-Gel Deposited SnO<sub>2</sub> and Electrochemically Deposited Cu<sub>2</sub>O
Department of Engineering Physics, Electronics and Mechanics, Nagoya Institute of Technology, Nagoya, Japan
Department of Engineering Physics, Electronics and Mechanics, Nagoya Institute of Technology, Nagoya, Japan
- 1 Department of Engineering Physics, Electronics and Mechanics, Nagoya Institute of Technology, Nagoya, Japan
- 2 Department of Engineering Physics, Electronics and Mechanics, Nagoya Institute of Technology, Nagoya, Japan
Materials Sciences and Applications·Volume 04 (2013)·Pages 1–4·Published 13 June 2013·DOI10.4236/msa.2013.46A001
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Abstract
To fabricate a heterostructure solar cell using environmentally friendly materials and low cost techniques, tin oxide (SnO 2 ) and cuprous oxide (Cu 2 O) were deposited by the sol-gel method and the electrochemical deposition, respectively. The SnO 2 films were deposited from a SnCl 2 solution containing ethanol and acetic acid. The Cu 2 O films were depos ited using a galvanostatic method from an aqueous bath containing CuSO 4 and lactic acid at a temperature of 40°C. The Cu 2 O/SnO 2 heterostructure solar cells showed rectification and photovoltaic properties, and the best cell showed a con version efficiency of 6.6 × 10 －2 % with an open-circuit voltage of 0.29 V, a short-circuit current of 0.58 mA/cm 2 , and a fill factor of 0.39.
KeywordsSol-Gel DepositionElectrochemical DepositionCu<sub>2</sub>OSnO<sub>2</sub>Solar Cell
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