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Temporal Evolution of Anodization Current of Porous Silicon Samples
Departamento de Física, Universidad Nacional de Colombia-Sede Bogotá, Ciudad Universitaria, Bogotá DC, Colombia; Departamento de Física, Universidad Militar Nueva Granada, Bogotá DC, Colombia
Departamento de Física, Universidad Nacional de Colombia-Sede Bogotá, Ciudad Universitaria, Bogotá DC, Colombia
Centro de Física Aplicada y Tecnología Avanzada, Universidad Nacional Autónoma de México, Querétaro, México
- 1 Departamento de Física, Universidad Nacional de Colombia-Sede Bogotá, Ciudad Universitaria, Bogotá DC, Colombia; Departamento de Física, Universidad Militar Nueva Granada, Bogotá DC, Colombia
- 2 Departamento de Física, Universidad Nacional de Colombia-Sede Bogotá, Ciudad Universitaria, Bogotá DC, Colombia
- 3 Centro de Física Aplicada y Tecnología Avanzada, Universidad Nacional Autónoma de México, Querétaro, México
Materials Sciences and Applications·Volume 04 (2013)·Pages 43–47·Published 14 August 2013·DOI10.4236/msa.2013.48A005
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Abstract
Temporal evolution of the anodization current of porous silicon samples was studied by means of a model of resistances connected in series that represent ed the temporal changes of the substrate and of the interface between the substrate and the electrolyte during the porous sample formation process. The porous samples were obtained by means of photoelectrochemical etching of (100) n -type silicon wafers with different resistivity values, all in the range of 1 - 25 W cm. The samples were formed at room temperature in an electrolytic bath composed by a mixture of hydrofluoric acid (48%) and ethanol having a composition ratio of 1:1 in volume under potentiostatic condition (10 V and 20 V) and an etching time of 2 minutes using back illumination provided by a laser beam with a wavelength of 808 nm .
KeywordsPorous SiliconElectrochemical EtchingAnodization Current
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