Conduction Mechanism Analysis of Inversion Current in MOS Tunnel Diodes
- 1 Department of Physics, Yildiz Technical University, Istanbul, Turkey
- 2 Department of Physics, Yildiz Technical University, Istanbul, Turkey
- 3 Department of Physics, Yildiz Technical University, Istanbul, Turkey
Abstract
Self inversion issue and excess capacitance phenomenon were observed for the first time in relatively thick silicon di oxide (SiO 2 ) in the form of MOS (metal(Al)/SiO 2 /p type crystalline silicon) structure. Both phenomena were based on minority carriers (electrons in this case) and studied through DC current-applied bias voltage (I-V) and AC admittance measurements in dark/light condition as a function of ambient temperature (295 - 380 K). Either of the cases was the departure of traditional MOS analysis, manifesting themselves in the inversion regime of MOS diode. Increase in fre quency/temperature/light intensity within dark and light conditions led to weaken the maxima of hump in C-V curves and finally turned into deep depletion mode after exceeding threshold value of frequency/temperature/light intensity. In resumed conditions, supplementary I-V measurements were carried out to describe the generation and conduction mechanism(s) for minority carriers (electrons).
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