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Transport Properties of AgInSe<sub>2</sub> Crystals
Physics Department, College of Science and Arts, Najran University, Najran, KSA; Physics Department, Faculty of Science, South Valley University, Qena, Egypt
Physics Department, Faculty of Science, South Valley University, Qena, Egypt
- 1 Physics Department, College of Science and Arts, Najran University, Najran, KSA; Physics Department, Faculty of Science, South Valley University, Qena, Egypt
- 2 Physics Department, Faculty of Science, South Valley University, Qena, Egypt
Materials Sciences and Applications·Volume 05 (2014)·Pages 292–299·Published 31 March 2014·DOI10.4236/msa.2014.55035
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Abstract
AgInSe 2 crystals were grown by Bridgman technique. The crystals were identified structurally by X-ray diffraction technique. Measurements of electrical conductivity and Hall effect were performed in the temperature range (138 K - 434 K) and (220 K - 488 K) for thermoelectric power measurements. From these measurements, many physical parameters were determined. The energy gap was calculated to be 1.24 eV. The conductivity type was found to be n-type. Crystallite size (D) of the obtained AgInSe 2 crystals was calculated to be 70 nm. The lattice parameters for the prepared crystals were a = 6.0938 ? and c = 11.7775 ? .
KeywordsSemiconductorsCrystal GrowthX-Ray DiffractionTransport Properties
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