Research ArticleOpen AccessGoogle Scholar indexed
Photoluminescence Properties of LaF<sub>3</sub>-Coated Porous Silicon
- 1
- 2
- 3
Materials Sciences and Applications·Volume 02 (2011)·Pages 649–653·Published 24 June 2011·DOI10.4236/msa.2011.26089
Copy link · social · email
Abstract
This work reports the coating of porous silicon (PS) with LaF3 and its influence on the photoluminescence (PL) property of PS. PS samples, prepared by electrochemical etching in a solution of HF and ethanol, were coated with e-beam evaporated-LaF<sub>3</sub> of different thicknesses. It was observed that the thin LaF<sub>3</sub> layer on PS led to a good enhancement of PL yield of PS. But with the increasing thickness of LaF<sub>3</sub> layer PL intensity of PS was decreasing along with a small blue-shift. It was also observed that all the coated samples showed degradation in PL intensity with time, but annealing could recover and stabilize the degraded PL.
KeywordsPorous SiliconAnodic EtchingPhotoluminescenceSurface CoatingPhotonics
- A. G. Cullis, L. T. Canham, and P. D. J. Calcott, “The structural and luminescence properties of porous silicon”, J. Appl. Phys., Vol. 82, 1997, pp 909-965.
- R. Boukherroub et al., “Thermal route for chemical modification and photoluminescence stabilization of porous silicon”, Phys. Stat. Sol. (A), Vol. 182, 2000, pp 117-121.
- B. Gelloz et al., “Stabilization of porous silicon electroluminescence by surface passivation with controlled covalent bonds”, Appl. Phys. Lett., Vol. 83, 2003, pp 2342-2344.
- R. Prabakaran et al., “The effects of ZnO coating on the photoluminescence properties of porous silicon for the advanced optoelectronic devices”, J. Non-Crys. Sol., Vol. 354, 2008, pp. 2181-2185.
- M. Rahmani et al., “Photoluminescence enhancement and stabilisation of porous silicon passivated by Iron”, J. Lumi., Vol. 128, 2008, pp 1763-1766
- A. G. Macedo et al., “Enhanced lifetime in porous silicon light-emitting diodes with fluorine doped tin oxide electrodes”, Thin Solid Films, Vol. 517, November 2008, pp 870-873
- E. D. Thoma, H. Shields, Y. Zhang, B. C. McCollum, R. T. Williams, J. Lumin., “EPR and Luminescence Studies of LaF3 and CeF3 under X-Ray and Laser Irradiation”, Vol. 71, 1997, pp 93 - 104.
- D. R. Lide (Ed), Physical Constants of Organic Compounds, in: CRC Handbook of Chemistry and Physics, (87th Edition), Taylor and Francis, Boca Raton, FL 2007.
- L. H. Jian et al., “Efficient visible porous silicon diodes passivated by carbon films”, Chin. Phys. Lett., Vol. 19, 2002, pp 1013-1015
- D. A. Kim, J.-H. Shim, N.-H. Cho, “PL and EL features of p-type porous silicon prepared by electrochemical anodic etching”, Applied Surface Science, Vol. 234, 2004, pp. 256-261.
- M. Ohmukai, M. Taniguchi, Y. Tsutsumi, “Large current density and anodization time needed for strong photoluminescence in porous silicon”, Mat. Sci. Engg. B, Vol. 86, 2001, pp 26-29
- A. Gokarna et al., “Optoelectronic characterization of porous silicon/CdS and ZnS systems”, Phys. Stat. Sol., Vol. 182, 2000, pp 175-178.
- L. K. Pan, Y. K. Ee, C. Q. Sun, G. Q. Yu, Q. Y. Zhang, and B. K. Tay, “Band-gap expansion, core-level shift, and dielectric suppression of porous silicon passivated by plasma fluorination”, J. Vac. Sci. Technol. B, Vol. 22, 2004, pp 583-587.
- T. Katsube, M. Hara, and I. Serizawa, “MOS-type micro-oxygen sensor using LaF3 workable at room temperature,” Jap. J. Appl. Phys., Vol. 29, 1990, pp L-392- L395.