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The Role of Silver Additions in Formation of Sn-Bi-Ag Semiconductor Alloys by Rapid Solidification
Physics Department, Faculty of Science, Port Said University, Port Said, Egypt
Physics Department, Preparatory Year Deanship, Jazan University, Jazan, Kingdom of Saudi Arabia
- 1 Physics Department, Faculty of Science, Port Said University, Port Said, Egypt
- 2 Physics Department, Preparatory Year Deanship, Jazan University, Jazan, Kingdom of Saudi Arabia
Materials Sciences and Applications·Volume 06 (2015)·Pages 228–233·Published 3 March 2015·DOI10.4236/msa.2015.63027
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Abstract
Five alloys Sn-5Bi-xAg (x = 0, 1, 2, 3, and 4 in at %) are produced by rapid solidification using melt-spinning technique. From temperature dependence of electrical resistivity (TDR), it is found that the Sn-5Bi-xAg (x = 1, 2, 3, 4 in at %) rapidly solidified by melt spinning technique are narrow band semiconductor alloys. The energy gap Eg decreases by increasing Ag concentration from 203 meV for Sn-5Bi-1Ag to 97.5 meV for Sn-5Bi-4Ag alloy. From x-ray diffraction analysis (XRD), it is found that the Hume-Rothery condition for phase stability is not satisfied for this alloy.
KeywordsRapid SolidificationSemiconductorEnergy gapResistivitySn-Bi-Ag Alloys
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