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Direct Structural Evidences of Epitaxial Growth Ge<SUB>1-X</SUB> Mn<SUB>X</SUB> Nanocolumn Bi-Layers on Ge(001)
Hong Duc University, Thanh Hoa City, Vietnam
- 1 Hong Duc University, Thanh Hoa City, Vietnam
Materials Sciences and Applications·Volume 06 (2015)·Pages 533–538·Published 29 May 2015·DOI10.4236/msa.2015.66057
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Abstract
Molecular Beam Epitaxy (MBE) system equipped with in-situ Reflection High-Energy Electron Diffraction (RHEED) has been used for (Ge, Mn) thin film growth and monitoring the surface morphology and crystal structure of thin films. Based on the observation of changes in RHEED patterns during nanocolumn growth, we used a real-time control approach to realize multilayer structures that consist of two nanocolumn layers separated by a Ge barrier layer. Transmission Electron Microscopy (TEM) has been used to investigate the structural properties of the GeMn nanocolumns and GeMn/Ge nanocolumns bi-layers samples.
KeywordsGeMn Diluted Magnetic SemiconductorsMuti-LayersGeMn NanocolumnsThin FilmEpitaxial Growth
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