Observation of Violet-Light Emission Band for Thulium-Doped Tantalum-Oxide Films Produced by Co-Sputtering

Abstract

We prepared thulium-doped tantalum (V) oxide (Ta 2 O 5 :Tm) thin films using co-sputtering of two Tm 2 O 3 pellets and a Ta 2 O 5 disc, and we observed photoluminescence (PL) peaks not only around a wavelength of 800 nm due to the 3 H 4 → 3 H 6 transition of Tm 3+ but also around a wavelength of 400 nm (violet) from the films after annealing for the first time. Comparatively narrow PL peaks around the wavelength of 400 nm were observed from the films annealed at 800 ° C and 900 ° C for 20 min. The peak intensity from the film annealed at 900 ° C was approximately four-times stronger than that from the film annealed at 800 ° C. The origin of the 400-nm peaks seems to be the same as our non-doped Ta 2 O 5 thin films deposited using radio-frequency sputtering because we observe PL peaks around 400 - 430 nm from the Ta 2 O 5 films. Such a Ta 2 O 5 :Tm co-sputtered thin film seems to be used as a multi-functional coating film having both anti-reflection and down-conversion effects for realizing a high-efficiency silicon solar cell.