Electrical Transport Properties of Bi<sub>2</sub>O<sub>3</sub>-Doped CoFe<sub>2</sub>O<sub>4</sub> and CoHo<sub>0.02</sub>Fe<sub>1.98</sub>O<sub>4</sub> Ferrites — Oak Academic Publishing
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Electrical Transport Properties of Bi<sub>2</sub>O<sub>3</sub>-Doped CoFe<sub>2</sub>O<sub>4</sub> and CoHo<sub>0.02</sub>Fe<sub>1.98</sub>O<sub>4</sub> Ferrites
Department of Physics, Bahauddin Zakariya University Multan, Pakistan -60800
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1 Department of Physics, Bahauddin Zakariya University Multan, Pakistan -60800
Two series of CoHo<sub>x</sub>Fe<sub>2-x</sub> O<sub>4</sub> (x = 0.0,0.02) ferrites with Bismuth oxide doping from (0.1-0.3)% were prepared by Co-precipitation technique. X-ray diffraction analysis revealed fcc structure. The lattice constants were found to decrease as the doping of Bi<sub>2</sub>O<sub>3</sub>increases in both series. An increase in Bismuth oxide concentration from (0.1-0.3%) in CoFe<sub>2</sub>O<sub>4</sub>, and CoHo<sub>0.02</sub>Fe<sub>1.98</sub>O<sub>4</sub>ferrites leads to an increase in room temperature resistivity. Temperature dependent resistivity decreases as the temperature increases following the Arrhenius equation. The activation energy increases with the increase of Bi<sub>2</sub>O<sub>3</sub>-concentration for both CoFe<sub>2</sub>O<sub>4</sub> and CoHo<sub>0.02</sub>Fe<sub>1.98</sub>O<sub>4</sub>series. The frequency dependant dielectric constant follows the Maxwell-Wagner type interfacial polarization. The dielectric loss indicates the normal behavior of these ferrites. SEM analysis shows an increase in grain size with increasing Bismuth concentration.
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