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Thermodynamic Properties of Semiconductors with Defects
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Materials Sciences and Applications·Volume 02 (2011)·Pages 1225–1232·Published 27 September 2011·DOI10.4236/msa.2011.29166
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Abstract
Thermodynamic properties of diamond cubic and zinc-blende semiconductors with point defects are considered by the statistical moment method (SMM). The thermal expansion coefficient, the specific heats at constant volume and those at constant pressure, C<sub>V</sub> and C<sub>P</sub>, and the isothermal compressibility are derived analytically for semiconductors with defects. The SMM calculated thermodynamic quantities of the Si, and GaAs semiconductors with defects are in good agreement with the experimental results.
KeywordsAnharmonic Defective SemiconductorStatistical Moment Method
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