Direct Synthesis of Graphene on Silicon at Low Temperature for Schottky Junction Solar Cells
- 1 Engineering Department, Chubu University, Kasugai, Japan
- 2 C’s Techno Inc., Co-Operative Research Center for Advanced Technology, Nagoya Science Park, Nagoya, Japan
- 3 C’s Techno Inc., Co-Operative Research Center for Advanced Technology, Nagoya Science Park, Nagoya, Japan
Abstract
Graphene thin films synthesized directly at low temperature (550˚C) on silicon substrate by microwave (MW) surface wave plasma (SWP) chemical vapor deposition (CVD) using the cover on substrates for avoiding plasma emission ultraviolet ray’s effect during film deposition. Analytical methods such as Raman spectroscopy, Transmission electron microscopy (TEM) and Scanning electron microscopy (SEM), four-point probe method, and JASCO V-570 UV/VIS/NIR spectrophotometer were employed to characterize the properties of the graphene films. Here, we report that it is possible to grow graphene directly on the silicon substrate (without using catalyst) due to the high radical density of MW SWP CVD. Furthermore, we fabricated graphene/silicon Schottky junction solar cells with an efficiency of up to 6.39%. Compared to conventional silicon solar cells, the fabrication process is greatly simplified; just graphene is synthesized directly on n-type crystalline Si substrate at low temperate.
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