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Annealing Temperature-Dependent Luminescence Color Coordination in Eu-Doped AlN Thin Films
Department of Physics, Tokyo University of Science, Tokyo, Japan
Department of Physics, Tokyo University of Science, Tokyo, Japan
Research Center for Space System Innovation, Tokyo University of Science, Chiba, Japan
Department of Physics, Tokyo University of Science, Tokyo, Japan
- 1 Department of Physics, Tokyo University of Science, Tokyo, Japan
- 2 Department of Physics, Tokyo University of Science, Tokyo, Japan
- 3 Research Center for Space System Innovation, Tokyo University of Science, Chiba, Japan
- 4 Department of Physics, Tokyo University of Science, Tokyo, Japan
Journal of Materials Science and Chemical Engineering·Volume 12 (2024)·Pages 20–28·Published 15 January 2024·DOI10.4236/msce.2024.121002
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Abstract
AlN was used as a host material and doped with Eu grown on Si substrate by pulsed laser deposition (PLD) with low substrate temperature. The X-ray diffraction (XRD) data revealed the orientation and the composition of the thin film. The surface morphology was studied by scanning electron microscope (SEM). While raising the annealing temperatures from 300 ˚ C to 900 ˚ C, the emission was observed from AlN: Eu under excitation of 260 nm excitation. The photoluminescence (PL) was integrated over the visible light wavelength shifted from the blue to the red zone in the CIE 1931 chromaticity coordinates. The luminescence color coordination of AlN: Eu depending on the annealing temperatures guides the further study of Eu-doped nitrides manufacturing on white light emitting diode (LED) and full color LED devices.
KeywordsLow-Temperature PLD GrowthEu-Doped AlN Thin FilmWhite Light Emitting Diode
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