Dynamic Analysis of Thermo-Magnetic Effects on a N⁺/P/P⁺ Silicon Solar Cell

Abstract

In this study, we analyze the dynamic behaviour of a silicon solar cell with an N⁺/P/P⁺ structure subjected simultaneously to thermal and magnetic stresses. The theoretical approach is based on solving the diffusion equation in the frequency domain, incorporating the effects of temperature and magnetic field on minority carriers. The influence of these factors on mobility, diffusion coefficient, surface recombination, and electrical performance (Jsc, Voc, impedance) is examined in detail. Frequency-domain analysis, particularly through Nyquist plots, reveals alterations in capacitive and resistive properties, modelled using a modified Randles equivalent circuit. These results provide in-depth insight into dynamic losses caused by extreme environments and offer pathways for optimizing the design of robust solar cells suited for space, industrial, or embedded applications.