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First-Principles Study on the Electronic and Optical Properties of Al/F Co-Doped ZnO
School of Health and Nursing, Yunnan Open University, Kunming, China
Huaning Yunengtou New Energy Development Co., LTD, Yuxi, China
School of Health and Nursing, Yunnan Open University, Kunming, China
School of Materials Science and Engineering, Southwest Forestry University, Kunming, China
School of Health and Nursing, Yunnan Open University, Kunming, China
- 1 School of Health and Nursing, Yunnan Open University, Kunming, China
- 2 Huaning Yunengtou New Energy Development Co., LTD, Yuxi, China
- 3 School of Health and Nursing, Yunnan Open University, Kunming, China
- 4 School of Materials Science and Engineering, Southwest Forestry University, Kunming, China
- 5 School of Health and Nursing, Yunnan Open University, Kunming, China
Journal of Materials Science and Chemical Engineering·Volume 13 (2025)·Pages 78–85·Published 10 December 2025·DOI10.4236/msce.2025.1312004
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Abstract
Based on density functional theory (DFT), this study used first-principles calculations to explore the electronic and optical properties of Al/F co-doped ZnO. The results show that the Al-3s, Al-3p, and F-2p orbitals introduce impurity states near the Fermi level, thereby enhancing the electrical conductivity of the co-doped system. Al/F co-doped ZnO is an n-type direct semiconductor with the average transmittance of 93.9% in the wavelength range of 400 nm to 1400 nm. This study provides theoretical guidance for the preparation of Al and F co-doped ZnO thin films.
KeywordsDFTAl/F Co-Doped ZnOElectronic StructureOptical Property
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