Preparation of CuO-Ta<SUB>2</SUB>O<SUB>5</SUB> Composites Using a Simple Co-Sputtering Method

Abstract

We prepared CuO- Ta 2 O 5 composite films using our simple co-sputtering method for the first time. Four specimens were prepared from an as-deposited CuO- Ta 2 O 5 sample by cutting it using a diamond- wire saw, and the specimens were subsequently annealed at 600 ° C - 900 ° C. The X-ray diffraction and photoluminescence (PL) of the annealed specimens were evaluated. The CuO- Ta 2 O 5 film annealed at 600 ° C seemed to be primarily amorphous phase, and a sharp PL peak at a wavelength of 450 nm, due to the existence of Cu 2+ , was observed from the film. In contrast, the CuO- Ta 2 O 5 films annealed at 700 ° C, 800 ° C, and 900 ° C seemed to be tetragonal Cu Ta 2 O 6 phases. We expect that good-quality Cu Ta 2 O 6 films can be obtained using our very simple co-sputtering method and subsequent annealing above 900 ° C. Such Cu Ta 2 O 6 films can be used in chemisorptions conductometric gas sensors.