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Characterization of InGaN Solar Cells
LRM Laboratory, University of Abou Bekr Belkaïd, Tlemcen, Algeria
LRM Laboratory, University of Abou Bekr Belkaïd, Tlemcen, Algeria
- 1 LRM Laboratory, University of Abou Bekr Belkaïd, Tlemcen, Algeria
- 2 LRM Laboratory, University of Abou Bekr Belkaïd, Tlemcen, Algeria
Journal of Materials Science and Chemical Engineering·Volume 03 (2015)·Pages 88–91·Published 13 November 2015·DOI10.4236/msce.2015.311011
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Abstract
The III-V materials are extensively studied for optoelectronic applications in the blue and UV spectral regions. InGaN ternary alloy is considered for its wide spectral coverage, good electrical characteristics and appreciable resistance to high electrical currents. For this purpose, the operation of InGaN photovoltaic cells was studied by 2D numerical simulation under AM1.5 spectrum illumination, using the software Silvaco and the two environments Athena/Atlas.
KeywordsSilvacoIndium Gallium NitrideSolar CellsNumerical SimulationAtlas/Silvaco
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