Investigation of the Influence of Annealing Temperature on the Morphology and Growth Kinetic of Ni3Sn4 in the Ni-Sn-Solder System
- 1 Institut für Füge-und Schweiβtechnik, Technische Universität Braunschweig, Braunschweig, Germany
- 2 Osram Opto Semiconductors GmbH, Leibnizstraβe 4, Regensburg, Germany
- 3 Osram Opto Semiconductors GmbH, Leibnizstraβe 4, Regensburg, Germany
- 4 Osram Opto Semiconductors GmbH, Leibnizstraβe 4, Regensburg, Germany
- 5 Institut für Füge-und Schweiβtechnik, Technische Universität Braunschweig, Braunschweig, Germany
Abstract
The reaction between high purity nickel (99.999%) and high purity tin (99.999%) was investigated in the temperature range of 232 ℃ - 330 ℃ , at short periods of annealing (1 - 60 s). The reaction kinetic was studied using cross-sectional scanning electron microscope (SEM) images. The intermetallic compound (IMC) growth was analyzed using the empirical power law and a time dependence in the range of 0.26 to 0.33 was found. The morphology of the IMC was investigated by SEM in the temperature range of 235 ℃ - 290 ℃ , at annealing periods of 10 s, 30 s, and 60 s by selectively etching away the remaining elementary tin. The exposed IMC displays a change in morphology with increasing annealing temperature, demonstrating that the growth velocity of certain crystallographic orientations of the IMC is strongly influenced by the annealing temperature. Additionally, coarsening and crumbling of the IMC grains is observed, and will be discussed with respect to the responsible mechanisms.
- OSRAM Executive Summary (2009) Life Cycle Assessment of Illuminants—A Comparison of Light Bulbs, Compact Fluorescent Lamps and LED Lamps. Published by OSRAM Opto Semiconductors GmbH, Regensburg, Germany and Siemens Corporate Technology, Berlin, Germany.
- Laurila, T., Vuorinen, V. and Kivilahti, J.K. (2005) Interfacial Reactions between Lead-Free Solders and Common Base Materials. Material Science and Engineering: R: Reports, 49, 1-60. http://dx.doi.org/10.1016/j.mser.2005.03.001
- Gur, D. and Bamberger, M. (1998) Reactive Isothermal Solidification in the Ni-Sn System. Acta Materialia, 46, 4917-4923. http://dx.doi.org/10.1016/S1359-6454(98)00192-X
- Shen, J., Chan, Y.C. and Liu, S.Y. (2009) Growth Mechanism of Ni3Sn4 in a Sn/Ni Liquid Solid Interfacial Reaction. Acta Materialia, 57, 5196-5206. http://dx.doi.org/10.1016/j.actamat.2009.07.021
- Gosh, G. (2000) Coarsening Kinetics of Ni3Sn4 Scallops during Interfacial Reaction between liquid Eutectic Solders and C/Ni/Pd Metallization. Journal of Applied Physics, 88, 6887-6896. http://dx.doi.org/10.1063/1.1321791
- Alam, M.O. and Chan, Y.C. (2005) Solid-State Growth Kinetics of Ni3Sn4 at the Sn-3.5Ag Solder/Ni Interface. Journal of Applied Physics, 98, Article ID: 123527.
- Jeon, Y.D., Nieland, S., Ostmann, A., Reichl, H. and Paik, K.W. (2002) Studies of the Interfacial Reactions between Electroless Ni UBM and 95.5Sn-4.0Ag-0.5Cu Alloy. Proceedings of the Electronic Components and Technology Conference, San Diego, 31 May 2002, 740-747.
- Chen, H.-Y. and Chen, C. (2012) Kinetic Study of the Intermetallic Compound Formation between Eutectic Sn-3,5Ag Alloys and Electroplated Ni Metallization in Flip-Chip Solder Joints. Journal of Material Research, 27, 1169-1177. http://dx.doi.org/10.1557/jmr.2012.22
- Yu, C.-C., Su, P.-C., Bai, S.J. and Chuang, T.-H. (2014) Nickel-Tin Solid-Liquid Inter-Diffusion Bonding. International Journal of Precision Engineering and Manufacturing, 15, 143-147. http://dx.doi.org/10.1007/s12541-013-0317-2
- Mita, M., Kajihara, M., Kurokawa, N. and Sakamoto, K. (2005) Growth Behavior of Ni3Sn4 Layer during Reactive Diffusion between Ni and Sn at Solid-State Temperatures. Journal of Material Science and Engineering A, 403, 269-275. http://dx.doi.org/10.1016/j.msea.2005.05.012
- Bader, S., Gust, W. and Hieber, H. (1995) Rapid Formation of Intermetallic Compounds by Interdiffusion in the Cu-Sn and Ni-Sn Systems. Acta Metallurgica et Materialia, 43, 329-337.