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ZnO Films Deposited on Glass by Means of DC Sputtering
Department of Electrical and Computer Engineering, Akashi College of Technology, Akashi, Japan
Technical Education Support Center, Akashi College of Technology, Akashi, Japan
Collaborative Laboratories for Advanced Decommissioning Science, Japan Atomic Energy Agency, Ibaraki, Japan
- 1 Department of Electrical and Computer Engineering, Akashi College of Technology, Akashi, Japan
- 2 Technical Education Support Center, Akashi College of Technology, Akashi, Japan
- 3 Collaborative Laboratories for Advanced Decommissioning Science, Japan Atomic Energy Agency, Ibaraki, Japan
Journal of Materials Science and Chemical Engineering·Volume 04 (2016)·Pages 1–7·Published 10 October 2016·DOI10.4236/msce.2016.410001
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Abstract
ZnO films were deposited on glass substrates by means of a direct current (DC) sputtering technique. The physical properties of the films were investigated on the basis of X-ray diffraction measurements. It was found that as-deposited films show c-axis oriented crystal normal to the surface with the extension of c axis by 1.27% that is estimated from the shift of the peak in the X-ray diffraction pattern. Post-deposition annealing in air at higher than 400 ℃ eliminates the shift and sharpens the diffraction peak structure at the same time. The electrical resistivity continues to decrease from 500 Ω • cm down to 0.6 Ω • cm by annealing as high as 600 ℃ .
KeywordsZnO FilmDC SputteringAnnealingX-Ray Analysis
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