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TEM Observation of Si0.99C0.01 Thin Films with Arsenic-Ion-, Boron-Ion-, and Silicon-Ion-Implantation Followed by Rapid Thermal Annealing
Center for Crystal Science and Technology, University of Yamanashi, Kofu, Japan
Center for Crystal Science and Technology, University of Yamanashi, Kofu, Japan
Center for Crystal Science and Technology, University of Yamanashi, Kofu, Japan
Center for Crystal Science and Technology, University of Yamanashi, Kofu, Japan
Advanced Research Laboratories, Tokyo City University, Tokyo, Japan
Advanced Research Laboratories, Tokyo City University, Tokyo, Japan
Hitachi Kokusai Electric Inc., Toyama, Japan
Hitachi Kokusai Electric Inc., Toyama, Japan
Hitachi Kokusai Electric Inc., Toyama, Japan
- 1 Center for Crystal Science and Technology, University of Yamanashi, Kofu, Japan
- 2 Center for Crystal Science and Technology, University of Yamanashi, Kofu, Japan
- 3 Center for Crystal Science and Technology, University of Yamanashi, Kofu, Japan
- 4 Center for Crystal Science and Technology, University of Yamanashi, Kofu, Japan
- 5 Advanced Research Laboratories, Tokyo City University, Tokyo, Japan
- 6 Advanced Research Laboratories, Tokyo City University, Tokyo, Japan
- 7 Hitachi Kokusai Electric Inc., Toyama, Japan
- 8 Hitachi Kokusai Electric Inc., Toyama, Japan
- 9 Hitachi Kokusai Electric Inc., Toyama, Japan
Journal of Materials Science and Chemical Engineering·Volume 05 (2017)·Pages 15–25·Published 4 January 2017·DOI10.4236/msce.2017.51003
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Abstract
Strained Si and its related materials, such as strained SiGe and strained silicon-carbon alloy (Si-C), are receiving tremendous interest due to their high carrier mobility. In this study we carry out a basic investigation of the change in microstructure of ion-implanted Si-C solid solution caused by rapid thermal annealing, because it is very important to realize a field-effect transistor made of this new material. The microstructures of arsenic-ion-, boron-ion-, and silicon-ion-implanted Si0.99C0.01 specimens upon thermal annealing are observed using transmission electron microscopy, and it is revealed that the rate of solid-state crystallization of ion-implanted Si-C is slower than that of the ion-implanted Si.
KeywordsStrained HeterodeviceSilicon-Carbon AlloyIon ImplantationTransmission Electron Microscopy
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