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TEM and STEM Observations of a Flat Continuous Silicon-Germanium Thin Film Epitaxially Grown on Porous Silicon
Center for Crystal Science and Technology, University of Yamanashi, Kofu, Japan
Graduate School of Engineering, Nagoya University, Nagoya, Japan
Institut des Nanotechnologies de Lyon, site INSA-Lyon, Villeurbanne, France
Institut des Nanotechnologies de Lyon, site INSA-Lyon, Villeurbanne, France
Institut des Nanotechnologies de Lyon, site INSA-Lyon, Villeurbanne, France
Center for Creative Technology, University of Yamanashi, Kofu, Japan
Center for Crystal Science and Technology, University of Yamanashi, Kofu, Japan
Center for Instrumental Analysis, University of Yamanashi, Kofu, Japan
- 1 Center for Crystal Science and Technology, University of Yamanashi, Kofu, Japan
- 2 Graduate School of Engineering, Nagoya University, Nagoya, Japan
- 3 Institut des Nanotechnologies de Lyon, site INSA-Lyon, Villeurbanne, France
- 4 Institut des Nanotechnologies de Lyon, site INSA-Lyon, Villeurbanne, France
- 5 Institut des Nanotechnologies de Lyon, site INSA-Lyon, Villeurbanne, France
- 6 Center for Creative Technology, University of Yamanashi, Kofu, Japan
- 7 Center for Crystal Science and Technology, University of Yamanashi, Kofu, Japan
- 8 Center for Instrumental Analysis, University of Yamanashi, Kofu, Japan
Journal of Materials Science and Chemical Engineering·Volume 05 (2017)·Pages 26–34·Published 4 January 2017·DOI10.4236/msce.2017.51004
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Abstract
Strain-relaxed SiGe is an attractive material for use as a substrate of strained Si, in which carrier mobility is higher than that of bulk Si. The concept of this study is the use of porous Si as a sponge like substrate so that a SiGe lattice can relax without introducing dislocations. We produced porous Si specimens by electro chemical anodization and annealed them under a H2 atmosphere. Then, SiGe thin films were grown by gas-source molecular beam epitaxy. We observed the microstructure of the specimens using transmission electron microscopy. The result showed that we succeeded in producing a single-crys- tal continuous Si0.73Ge0.27 film with a 10% relaxation ratio and a low dislocation density on porous Si.
KeywordsPorous SiliconSilicon GermaniumStrain RelaxationStrained SiliconNanostructureHigh-Mobility SemiconductorsTransmission Electron Microscopy
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