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Ohmic Contact Formation for n+4H-SiC Substrate by Selective Heating Method Using Hydrogen Radical Irradiation
Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, Kofu, Japan
Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, Kofu, Japan
Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, Kofu, Japan
Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, Kofu, Japan
Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, Kofu, Japan
Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, Kofu, Japan
Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, Kofu, Japan
SST Inc., Yachiyo, Japan
Fuji Electric Co., Ltd., Matsumoto, Japan
Fuji Electric Co., Ltd., Matsumoto, Japan
Fuji Electric Co., Ltd., Matsumoto, Japan
- 1 Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, Kofu, Japan
- 2 Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, Kofu, Japan
- 3 Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, Kofu, Japan
- 4 Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, Kofu, Japan
- 5 Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, Kofu, Japan
- 6 Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, Kofu, Japan
- 7 Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, Kofu, Japan
- 8 SST Inc., Yachiyo, Japan
- 9 Fuji Electric Co., Ltd., Matsumoto, Japan
- 10 Fuji Electric Co., Ltd., Matsumoto, Japan
- 11 Fuji Electric Co., Ltd., Matsumoto, Japan
Journal of Materials Science and Chemical Engineering·Volume 05 (2017)·Pages 35–41·Published 4 January 2017·DOI10.4236/msce.2017.51005
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Abstract
We developed an apparatus for producing high-density hydrogen plasma. We confirmed that the temperatures of transition-metal films increased to above 800?C within 5 s when they were exposed to hydrogen plasma formed using the apparatus. We applied this phenomenon to the selective heat treatment of W/Ni films deposited on n+4H-SiC wafers and formed nickel silicide electrodes. To utilize this method, we can perform the nickel silicidation process without heating the other areas such as channel regions and improve the reliability.
KeywordsSelective HeatingNickel Silicide ElectrodeHydrogen PlasmaOhmic ContactSiC
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