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Reduction of Dislocation Densities of Ge Layers Grown on Si Substrates by Using Microwave Plasma Heating and Fabrication of High Hole Mobility MOSFETs on Ge Layers
Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, Kofu, Japan
Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, Kofu, Japan
Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, Kofu, Japan
Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, Kofu, Japan
Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, Kofu, Japan
Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, Kofu, Japan
SST Inc., Yachiyo, Japan
- 1 Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, Kofu, Japan
- 2 Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, Kofu, Japan
- 3 Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, Kofu, Japan
- 4 Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, Kofu, Japan
- 5 Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, Kofu, Japan
- 6 Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, Kofu, Japan
- 7 SST Inc., Yachiyo, Japan
Journal of Materials Science and Chemical Engineering·Volume 05 (2017)·Pages 42–47·Published 4 January 2017·DOI10.4236/msce.2017.51006
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Abstract
We have developed a microwave plasma heating technique to rapidly heat the transition metal. W/SiO2 layers were deposited on Ge/Si heterostructures. By heating the W, dislocations in Ge layers originated from lattice mismatch between Ge and Si crystals were reduced drastically. We have fabricated p- MOSFETs on Ge/Si substrates and realized higher mobility of about 380 cm2/ Vs than that of Si p-MOSFET.
KeywordsMicrowave Plasma HeatingHigh Hole MobilityGe on Si
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