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Mg Tilted-Angle Ion Implantation for Threshold Voltage Control and Suppression of the Short Channel Effect in GaN MISFETs
Department of Electrical and Electronics Engineering, Hosei University, Koganei, Tokyo, Japan
Department of Electrical and Electronics Engineering, Hosei University, Koganei, Tokyo, Japan
Department of Electrical and Electronics Engineering, Hosei University, Koganei, Tokyo, Japan
Department of Electrical and Electronics Engineering, Hosei University, Koganei, Tokyo, Japan
- 1 Department of Electrical and Electronics Engineering, Hosei University, Koganei, Tokyo, Japan
- 2 Department of Electrical and Electronics Engineering, Hosei University, Koganei, Tokyo, Japan
- 3 Department of Electrical and Electronics Engineering, Hosei University, Koganei, Tokyo, Japan
- 4 Department of Electrical and Electronics Engineering, Hosei University, Koganei, Tokyo, Japan
Journal of Materials Science and Chemical Engineering·Volume 05 (2017)·Pages 48–53·Published 4 January 2017·DOI10.4236/msce.2017.51007
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Abstract
This paper demonstrates that threshold voltages of GaN MISFET are controlla-ble by varying the Mg ion doses for Mg ion implantation. Furthermore, it de-monstrates for the first time that the short channel effect can be suppressed using a halo structure that has a p-layer in channel regions adjacent to source/ drain regions using tilt ion implantation. A device with a Mg dose of 8 × 1013/cm2 achieved maximum drain current of 240 mA/mm and a transconductance of 40 mS/mm. These results indicate a definite potential for the use of our new process in GaN MISFETs for applications in power switching devices.
KeywordsGaNMISFETMg Ion ImplantationThreshold Voltage
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