Research ArticleOpen AccessGoogle Scholar indexed
STEM Moiré Observation of Lattice-Relaxed Germanium Grown on Silicon
Center for Crystal Science and Technology, University of Yamanashi, Kofu, Japan
Center for Creative Technology, University of Yamanashi, Kofu, Japan
Center for Crystal Science and Technology, University of Yamanashi, Kofu, Japan
Center for Crystal Science and Technology, University of Yamanashi, Kofu, Japan
Center for Crystal Science and Technology, University of Yamanashi, Kofu, Japan
Center for Crystal Science and Technology, University of Yamanashi, Kofu, Japan
Center for Crystal Science and Technology, University of Yamanashi, Kofu, Japan
Center for Instrumental Analysis, University of Yamanashi, Kofu, Japan
- 1 Center for Crystal Science and Technology, University of Yamanashi, Kofu, Japan
- 2 Center for Creative Technology, University of Yamanashi, Kofu, Japan
- 3 Center for Crystal Science and Technology, University of Yamanashi, Kofu, Japan
- 4 Center for Crystal Science and Technology, University of Yamanashi, Kofu, Japan
- 5 Center for Crystal Science and Technology, University of Yamanashi, Kofu, Japan
- 6 Center for Crystal Science and Technology, University of Yamanashi, Kofu, Japan
- 7 Center for Crystal Science and Technology, University of Yamanashi, Kofu, Japan
- 8 Center for Instrumental Analysis, University of Yamanashi, Kofu, Japan
Journal of Materials Science and Chemical Engineering·Volume 05 (2017)·Pages 102–108·Published 4 January 2017·DOI10.4236/msce.2017.51014
Copy link · social · email
Abstract
We deposited Ge films on Si substrates by molecular beam epitaxy (MBE) method. The specimens were annealed at around 750 C using microwave- plasma heating technique which we had reported before. After these pro- cesses, we carried out special scanning transmission electron microscopic (STEM) observation. The moiré between the crystal lattices and the scanning lines controlled by STEM was utilized to show lattice-spacing distribution. The results exhibited that we were succeeded in forming lattice-relaxed Ge thin films. It was also recognized that this STEM moiré technique is very useful to observe lattice-spacing distribution for large area with high resolution.
KeywordsSTEM MoiréLattice StrainGe on SiPlasma Heating
- Lee, C.H., Nishimura, T., Tabata, T., Wang, S.K., Nagashio, K., Kita, K. and Toriumi, A. (2010) Ge MOSFETs Performance: Impact of Ge Interface Passivation. 2010 IEEE International Electron Devices Meeting (IEDM), 18-1. https://doi.org/10.1109/iedm.2010.5703384
- Maeda, T., Ikeda, K., Nakaharai, S., Tezuka, T., Sugiyama, N., Moriyama, Y. and Takagi, S. (2006) Thin-Body Ge-on-Insulator p-Channel MOSFETs with Pt Germanide Metal Source/Drain. Thin Solid Films, 508, 346-350. https://doi.org/10.1016/j.tsf.2005.07.339
- Kamata, Y. (2008) High-k/Ge MOSFETs for Future Nanoelectronics. Materials Today, 11, 30-38. https://doi.org/10.1016/S1369-7021(07)70350-4
- Lee, M.L., Leitz, C.W., Cheng, Z., Antoniadis, D.A. and Fitzgerald, E.A. (2002) Strained Ge Channel p-Type Metal-Oxide-Semiconductor Field-Effect Transistors Grown on Sia a xGex/Sivirtual Substrates.
- Luan, H.C., Lim, D.R., Lee, K.K., Chen, K.M., Sandland, J.G., Wada, K. and Kimerling, L.C. (1999) High-Quality Ge Epilayers on Si with Low Threading-Dislocation Densities. Applied Physics Letters, 75, 2909-2911. https://doi.org/10.1063/1.125187
- Currie, M.T., Samavedam, S.B., Langdo, T.A., Leitz, C.W. and Fitzgerald, E.A. (1998) Con-trolling Threading Dislocation Densities in Ge on Si Using Graded SiGe Layers and Chemical-Mechanical Polishing. Applied Physics Letters, 72, 1718-1720. https://doi.org/10.1063/1.121162
- Massalski, T.B., Okamoto, H., Subramanian, P.R. and Kacprzak, L. (1990) Binary Alloy Phase Diagrams. 2nd Edition, ASM International.
- Arai, T., Nakaie, H., Kamimura, K., Nakamura, H., Ariizumi, S., Ashizawa, S. and Takamatsu, T. (2016) Selective Heating of Transition Metal Using Hydrogen Plasma and Its Application to Formation of Nickel Silicide Electrodes for Silicon Ultralarge-Scale Integration Devices. Journal of Materials Science and Chemical Engineering, 4, 29. https://doi.org/10.4236/msce.2016.41006
- Arai, T., Kamimura, K., Yamamoto, C., Shirakura, M., Arimoto, K., Yamanaka, J., Nakagawa, K., Takamatsu, T., Ogino, M., Tachioka, M. and Nakazawa, H. (2017) Ohmic Contact Formation for n+ 4H-SiC Substrate by Selective Heating Method Using Hydrogen Radical Irradiation. Journal of Materials Science and Chemical Engineering, 5, 35-41. https://doi.org/10.4236/msce.2017.51005
- Nakaie, H., Arai, T., Yamamoto, C., Arimoto, K., Yamanaka, J., Nakagawa, K. and Takamatsu, T. Reduction of dislocation Densities of Ge Layers Grown on Sisubstrates by Using Microwave Plasma Heating and Fabrication of High Hole Mobility MOSFETs on Ge Layers. Journal of Materials Science and Chemical Engineering. (To Be Published)