Photoluminescence and X-Ray Diffraction Properties of Europium and Silver Co-Doped Tantalum-Oxide Thin Films Deposited by Co-Sputtering
- 1 Graduate School of Science and Technology, Gunma University, Kiryu, Japan
- 2 Graduate School of Science and Technology, Gunma University, Kiryu, Japan
- 3 Graduate School of Science and Technology, Gunma University, Kiryu, Japan
- 4 Graduate School of Science and Technology, Gunma University, Kiryu, Japan
- 5 Graduate School of Science and Technology, Gunma University, Kiryu, Japan
- 6 Graduate School of Science and Technology, Gunma University, Kiryu, Japan
Abstract
We fabricated europium and silver co-doped tantalum-oxide (Ta 2 O 5 :Eu, Ag) thin films using a simple co-sputtering method for the first time, and we evaluated their photoluminescence (PL) and X-ray diffraction (XRD) properties. We found that the most remarkable PL peak at a wavelength of 615 nm due to Eu 3+ can be enhanced by Ag doping, and the strongest PL peak can be obtained from a Ta 2 O 5 :Eu, Ag thin film after annealing at 1000 ℃ . Based on XRD measurements, we found that Ag 2 Ta 8 O 21 crystalline phases produced by Ag doping are very important and Eu 3 TaO 7 phases should be avoided in order to enhance the objective PL peak from our Ta 2 O 5 :Eu, Ag thin films.
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