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ZnO Films Deposited on Porous Silicon by DC Sputtering
Department of Electrical and Computer Engineering, Akashi College of Technology, Akashi, Japan
Technical Education Support Center, Akashi College of Technology, Akashi, Japan
Collaborative Laboratories for Advanced Decommissioning Science, Japan Atomic Energy Agency, Ibaraki, Japan
- 1 Department of Electrical and Computer Engineering, Akashi College of Technology, Akashi, Japan
- 2 Technical Education Support Center, Akashi College of Technology, Akashi, Japan
- 3 Collaborative Laboratories for Advanced Decommissioning Science, Japan Atomic Energy Agency, Ibaraki, Japan
Journal of Materials Science and Chemical Engineering·Volume 05 (2017)·Pages 12–20·Published 12 June 2017·DOI10.4236/msce.2017.56002
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Abstract
ZnO is now a fascinating semiconductor oxide material for light emission or transparent electronic conductors. We deposited ZnO films on porous silicon, which is known as a light emitting material based on silicon, by means of a direct current sputtering technique. The deposition was performed at room temperature, and the samples were annealed afterwards to improve the ZnO crystalline quality. The discussion to compare our results with that formed on Si wafer, reveals that the ZnO on porous silicon has the better crystalline quality in the scope of an X-ray diffraction measurement.
KeywordsZnO FilmDC SputteringAnnealingX-Ray Diffraction AnalysisPorous Silicon
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