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Formation of Poly-Si Films on Glass Substrates by Using Microwave Plasma Heating and Fabrication of TFT’s on the Films
Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, Kofu, Japan
Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, Kofu, Japan
Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, Kofu, Japan
Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, Kofu, Japan
Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, Kofu, Japan
Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, Kofu, Japan
SST Inc., Yachiyo, Japan
- 1 Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, Kofu, Japan
- 2 Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, Kofu, Japan
- 3 Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, Kofu, Japan
- 4 Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, Kofu, Japan
- 5 Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, Kofu, Japan
- 6 Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, Kofu, Japan
- 7 SST Inc., Yachiyo, Japan
Journal of Materials Science and Chemical Engineering·Volume 06 (2018)·Pages 19–24·Published 5 January 2018·DOI10.4236/msce.2018.61003
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Abstract
We have developed an apparatus for producing high-density hydrogen plasma. The atomic hydrogen density was 3.0 × 1021 m?3 at a pressure of 30 Pa, a microwave power of 1000 W, and a hydrogen gas flow rate of 5 sccm. We confirmed that the temperatures of tungsten films increased to above 1000?C within 5 s when they were exposed to hydrogen plasma formed using the apparatus. We applied this phenomenon to the selective heat treatment of tungsten films deposited on amorphous silicon films on glass substrates and formed polycrystalline silicon films. To utilize this method, we can perform the crystalline process only on device regions. TFTs were fabricated on the polycrystalline silicon films and the electron mobilities of 60 cm2/Vs were obtained.
KeywordsMicrowave Plasma HeatingPoly-SiThin Film Transistor
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