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Surface Roughness of SiGe/Si(110) Formed by Stress-Induced Twins and the Solution to Produce Smooth Surface
Center for Instrumental Analysis, University of Yamanashi, Kofu, Japan
Center for Instrumental Analysis, University of Yamanashi, Kofu, Japan
Center for Instrumental Analysis, University of Yamanashi, Kofu, Japan
Center for Crystal Science and Technology, University of Yamanashi, Kofu, Japan
Center for Crystal Science and Technology, University of Yamanashi, Kofu, Japan
Center for Crystal Science and Technology, University of Yamanashi, Kofu, Japan
Center for Crystal Science and Technology, University of Yamanashi, Kofu, Japan
Center for Crystal Science and Technology, University of Yamanashi, Kofu, Japan
Center for Crystal Science and Technology, University of Yamanashi, Kofu, Japan
Center for Creative Technology, University of Yamanashi, Kofu, Japan
- 1 Center for Instrumental Analysis, University of Yamanashi, Kofu, Japan
- 2 Center for Instrumental Analysis, University of Yamanashi, Kofu, Japan
- 3 Center for Instrumental Analysis, University of Yamanashi, Kofu, Japan
- 4 Center for Crystal Science and Technology, University of Yamanashi, Kofu, Japan
- 5 Center for Crystal Science and Technology, University of Yamanashi, Kofu, Japan
- 6 Center for Crystal Science and Technology, University of Yamanashi, Kofu, Japan
- 7 Center for Crystal Science and Technology, University of Yamanashi, Kofu, Japan
- 8 Center for Crystal Science and Technology, University of Yamanashi, Kofu, Japan
- 9 Center for Crystal Science and Technology, University of Yamanashi, Kofu, Japan
- 10 Center for Creative Technology, University of Yamanashi, Kofu, Japan
Journal of Materials Science and Chemical Engineering·Volume 06 (2018)·Pages 25–31·Published 5 January 2018·DOI10.4236/msce.2018.61004
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Abstract
Lattice-strained Si thin films grown onto SiGe(110)/Si(110) are attracting because of their potential to realize high-speed transistors. In this study we observe surface morphology of Si/SiGe/Si(110) using scanning electron microscopy and we also observe microstructure of the identical position using cross-sectional transmission electron microscopy. These results reveal that crossing of stress-induced twins causes remarkable surface roughness. We propose using vicinal substrate to avoid this phenomenon and our successive experimental results are shown in this paper.
KeywordsStrained SiSiGe(110)Stress-Induced TwinTransmission Electron Microscopy
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