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Feasibility Study to Evaluate Lattice-Space Changing of a Step-Graded SiGe/Si (110) Using STEM Moiré
University of Yamanashi, Takeda, Kofu, Japan
University of Yamanashi, Takeda, Kofu, Japan
University of Yamanashi, Takeda, Kofu, Japan
University of Yamanashi, Takeda, Kofu, Japan
University of Yamanashi, Takeda, Kofu, Japan
University of Yamanashi, Takeda, Kofu, Japan
University of Yamanashi, Takeda, Kofu, Japan
University of Yamanashi, Takeda, Kofu, Japan
HREM Research Inc., Matsukazedai, Higashimastuyama, Japan
HREM Research Inc., Matsukazedai, Higashimastuyama, Japan
- 1 University of Yamanashi, Takeda, Kofu, Japan
- 2 University of Yamanashi, Takeda, Kofu, Japan
- 3 University of Yamanashi, Takeda, Kofu, Japan
- 4 University of Yamanashi, Takeda, Kofu, Japan
- 5 University of Yamanashi, Takeda, Kofu, Japan
- 6 University of Yamanashi, Takeda, Kofu, Japan
- 7 University of Yamanashi, Takeda, Kofu, Japan
- 8 University of Yamanashi, Takeda, Kofu, Japan
- 9 HREM Research Inc., Matsukazedai, Higashimastuyama, Japan
- 10 HREM Research Inc., Matsukazedai, Higashimastuyama, Japan
Journal of Materials Science and Chemical Engineering·Volume 06 (2018)·Pages 8–15·Published 4 July 2018·DOI10.4236/msce.2018.67002
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Abstract
A moiré between crystal lattice planes and scanning electron beam-lines formed in a scanning transmission electron microscope includes the information of the lattice spacing. We apply these phenomena to a compositionally graded SiGe thin film deposited onto a Si substrate by molecular beam epitaxy method. The results of the experiments and image analysis show the potential of this technique to analyze a slight change of the lattice spacing according to a compositional change.
KeywordsSTEM MoiréSiGeScanning Transmission Electron Microscopy
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