Simulation of Substrate Temperature Distribution in Diamond Films Growth on WC-Co Tools Using HFCVD Method
- 1 College of Mechanical Engineering, Donghua University, Shanghai, China
- 2 College of Mechanical Engineering, Donghua University, Shanghai, China
- 3 College of Mechanical Engineering, Donghua University, Shanghai, China
Abstract
The substrate temperature is an important factor for diamond films fabricated by hot filament chemical vapor deposition (HFCVD), which affects the grain size and quality of diamond films. In order to deposit polycrystalline diamond films with good quality on the cutting tool, the substrate temperature distribution needs to be further studied. Thus three-dimensional finite element simulations are used to investigate the temperature field with different arrangements of filaments which have profound influences on substrate temperature distribution. Based on the simulation results, the optimum parameters of distance away from drill points and gap between filaments are founded. Subsequently, experiments of depositing diamond films on WC-Co drills are conducted with the optimum values gained from the simulation results. Then, the as-fabricated diamond films are investigated by scanning electron microscopy (SEM) and Raman spectroscopy. The results indicate that the surface of drill are covered with a layer of continuous diamond films, which validate that the simulated deposition parameters are conducive and provide a new method to adjust the substrate temperature distribution in the CVD reactor for depositing diamond films.
- Sun, F.H., Zhang, Z.M., Ming, C. and Shen, H.S. (2002) Fabrication and Application of High Quality Diamond-Coated Tools. Journal of Materials Processing Technology, 129, 435-440. https://doi.org/10.1016/S0924-0136(02)00635-0
- Fuentes-Fernandez, E.M.A., Alcantar-Peña, J.J., Lee, G., Boulom, A., Phan, H., Smith, B., et al. (2016) Synthesis and Characterization of Microcrystalline Diamond to Ultrananocrystalline Diamond Films via Hot Filament Chemical Vapor Deposition for Scaling to Large Area Applications. Thin Solid Films, 603, 62-68. https://doi.org/10.1016/j.tsf.2015.11.088
- Linnik, S.A., Gaydaychuk, A.V. and Baryshnikov, E.Y. (2016) Deposition of Polycrystalline Diamond Films with a Controlled Grain Size by Periodic Secondary Nucleation. Materials Today Proceedings, 3, S138-S144. https://doi.org/10.1016/j.matpr.2016.02.024
- Song, G.H., Sun, C., Huang, R.F., Wen, L.S. and Shi, C.X. (2000) Heat Transfer Simulation of HFCVD and Fundamentals of Diamond Vapor Growth Reactor Designing. Surface & Coatings Technology, 131, 500-505. https://doi.org/10.1016/S0257-8972(00)00785-4
- Wolden, C., Mitra, S. and Gleason, K.K. (1992) Radiative Heat Transfer in Hot-Filament Chemical Vapor Deposition Diamond Reactors. Journal of Applied Physics, 72, 3750-3758. https://doi.org/10.1063/1.352295
- Roy, M., George, V.C., Dua, A.K., Raj, P., Schulze, S., Tenne, D.A., et al. (2002) Feed Gas Dependence of the Surface Nanophase on HFCVD Grown Diamond Films Studied by Surface Enhanced Raman Spectroscopy. Applied Surface Science, 191, 334-337. https://doi.org/10.1016/S0169-4332(02)00215-5
- Barbosa, D.C., Nova, H.F.V. and Baldan, M.R. (2006) Numerical Simulation of HFCVD Process Used for Diamond Growth. Brazilian Journal of Physics, 36, 313-316. https://doi.org/10.1590/S0103-97332006000300021
- Barbosa, D.C., Almeida, F.A., Silva, R.F., Ferreira, N.G., Trava-Airoldi, V.J. and Corat, E.J. (2009) Influence of Substrate Temperature on Formation of Ultrananocrystalline Diamond Films Deposited by HFCVD Argon-Rich Gas Mixture. Diamond & Related Materials, 18, 1283-1288. https://doi.org/10.1016/j.diamond.2009.05.002
- Zhang, T., Zhang, J., Shen, B. and Sun, F. (2012) Simulation of Temperature and Gas Density Field Distribution in Diamond Films Growth on Silicon Wafer by Hot Filament CVD. Journal of Crystal Growth, 343, 55-61. https://doi.org/10.1016/j.jcrysgro.2012.01.005
- Song, G.H., Yoon, J.H., Kim, H.S., Sun, C., Huang, R.F. and Wen, L.S. (2002) Influence of Hot Filaments Arranging on Substrate Temperature during HFCVD of Diamond Films. Materials Letters, 56, 832-837. https://doi.org/10.1016/S0167-577X(02)00623-7