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Aqueous Sulfur Passivation of N-Type GaSb Substrates Studied by Photoluminescence Spectroscopy
Electronics Department, National Institute of Astrophysics, Optics and Electronics, Puebla, México
Instituto Politécnico Nacional-UPIITA, México DF, México
Physics Department, Cinvestav-IPN, México DF, México
Electronics Department, National Institute of Astrophysics, Optics and Electronics, Puebla, México
Physics Department, Cinvestav-IPN, México DF, México
Physics Department, Cinvestav-IPN, México DF, México
- 1 Electronics Department, National Institute of Astrophysics, Optics and Electronics, Puebla, México
- 2 Instituto Politécnico Nacional-UPIITA, México DF, México
- 3 Physics Department, Cinvestav-IPN, México DF, México
- 4 Electronics Department, National Institute of Astrophysics, Optics and Electronics, Puebla, México
- 5 Physics Department, Cinvestav-IPN, México DF, México
- 6 Physics Department, Cinvestav-IPN, México DF, México
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Abstract
In this work the influence of aqueous sulfur passivation on the surface of n-type (100) GaSb single crystals has been studied through low-temperature photoluminescence (PL) characterization. The samples were passivated at different times using aqueous solutions of sodium sulfide. PL spectroscopy was used to determinate the optimum time of sulfur passivation, through the measurement of the PL intensity for the different passivation times. For the samples measured, the PL spectra show the presence of two emission bands, whose intensity and energy position change for the different passivation times of the GaSb samples. According to the PL results, a passivation surface treatment of 6 min shows the highest PL intensity spectrum.
KeywordsGaSbPhotoluminescence SpectroscopySulfur Passivation
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