The Influence of Ultrasonic Treatment on the Properties of Schottky Diodes
- 1 Physical Faculty, Chair of Physical Electronics, The Baku State University, Baku, Azerbaijan
Abstract
The given work studies the reason of the change of a superfluous current near crystallization temperature of an amorphous α PbSb metal alloy and at the same time founds out the influence of ultrasonic processing (USP) on the properties of α PbSb-nSi solar elements (SE), made by Shottki diodes technology (ShD) with a metal alloy. It is found that occurrence of a superfluous current α PbSb-nSi ShD under the influence of thermoannealing is connected with changes of structure of an amorphous film of metal at transition in a polycrystalline condition. VAC damaged α PbSb-nSi Sh Dare very sensitive to annealing time. Eventually, even at room temperature, level of a superfluous current decreases, i.e. “ the wound ” put by mechanical damage sort of heals, restoration process occurs the faster, the higher the annealing temperature is. Function of γ t annealing parameters changes in an interval and the influence USP on photo-electric properties α PbSb-nSi SE depends on the chosen UIT mode.
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