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Diameter Dependent Ultrasonic Characterization of InAs Semiconductor Nanowires

¹ Department of Physics, University of Allahabad, Allahabad, India
² Department of Physics, University of Allahabad, Allahabad, India
³ Government Polytechnic, Gonda, India
⁴ Department of Physics, University of Allahabad, Allahabad, India

Open Journal of Acoustics·Volume 05 (2015)·Pages 218–225·Published 14 October 2015·DOI10.4236/oja.2015.54017

Abstract

In this paper, we report the diameter dependent ultrasonic characterization of wurtzite structured InAs semiconductor nanowires at the room temperature. In this work, we have calculated the non-linear higher order elastic constants of InAs nanowires validating the interaction potential model. The ultrasonic attenuation and velocity in the nanowires are determined using the elastic constants for different diameters of the nanowires. Where possible, the results are compared with the experiments. Finally, we have established the correlation between the size dependent thermal conductivity and the ultrasonic attenuation of the nanowires.

KeywordsUltrasonic AttenuationNanowiresElastic ConstantsThermal Relaxation TimeThermal Conductivity

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Diameter Dependent Ultrasonic Characterization of InAs Semiconductor Nanowires

Abstract

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