Electron Energy in Nanoheterostructure, Including Unmagnetic and Magnetic Layers
- 1 Institute of Telecommunications, Radio and Electronic Devices, National Technical University “Lvivska Politehnika”, Lviv, Ukraine
- 2 Institute of Telecommunications, Radio and Electronic Devices, National Technical University “Lvivska Politehnika”, Lviv, Ukraine
- 3 Institute of Telecommunications, Radio and Electronic Devices, National Technical University “Lvivska Politehnika”, Lviv, Ukraine
Abstract
In this communication , we report about the influence of barrier U 1 , form ed by magnetic layer ( Zn 0 . 9 Be 0 . 05 Mn 0 . 05 Se ) and chang ed by extending magnetic field due to Zeeman effect on the ground state energy of electron in nanoheterostructure Zn 0 . 943 Be 0 . 057 Se - ZnSe - Zn 0 . 943 Be 0 . 057 Se - Zn 0 . 9 Be 0 . 05 Mn 0 . 05 Se. The investigations were also carried out for different width of unmagnetic layer ( Zn 0 . 943 Be 0 . 057 Se ), with which such structures were prepared. The results point on decreasing of the ground state energy with magnetic field increasing. The unmagnetic layer width does not change essentially the energy of electrons in strong fields. In small fields , it is shown that the electron energy does not always depend on the extended field. T h ese cases are also dependent on non magnetic layer width. The received dependences are in qualitative agree ment with the experiment data on photoluminescence spectra.
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