Impact of the Doping Rate of Different Zone of the Bifacial PV Cell on the Electrical Parameters
- 1 Département de Physique, Laboratoire d’Energies Thermiques Renouvelables (L. E. T. RE) Université Joseph KI-ZERBO, Ouagadougou, Burkina Faso
- 2 Département de Physique, Laboratoire d’Energies Thermiques Renouvelables (L. E. T. RE) Université Joseph KI-ZERBO, Ouagadougou, Burkina Faso
- 3 Département de Physique, Laboratoire d’Energies Thermiques Renouvelables (L. E. T. RE) Université Joseph KI-ZERBO, Ouagadougou, Burkina Faso
- 4 Département de Physique, Laboratoire d’Energies Thermiques Renouvelables (L. E. T. RE) Université Joseph KI-ZERBO, Ouagadougou, Burkina Faso
- 5 Département de Physique, Laboratoire d’Energies Thermiques Renouvelables (L. E. T. RE) Université Joseph KI-ZERBO, Ouagadougou, Burkina Faso
- 6 Département de Physique, Laboratoire d’Energies Thermiques Renouvelables (L. E. T. RE) Université Joseph KI-ZERBO, Ouagadougou, Burkina Faso
- 7 Département de Physique, Université Virtuelle du Burkina Faso, Ouagadougou, Burkina Faso
Abstract
In this work, we investigate the effect of the doping rate on the electrical parameters of the different zones of the bifacial polycrystalline silicon solar cell under multispectral illumination. To do this, from our hypothesis, we determined the expression of the continuity equation in the emitter, the base and the overdoped zone p + . The photocurrent density, photovoltage and electrical power were studied as a function of the dynamic velocity at the junction for different values of the doping rate. The results obtained by simulation show us that to achieve the best performance of the bifacial PV cell the doping rate of the emitter should be between [10 18 - 10 19 cm −3 ], that of the base between [10 16 - 10 17 cm −3 ] and for the p + zone between [10 20 - 10 21 cm −3 ]. Within these doping ranges, the fill factor, which represents the efficiency of the cell, reaches optimal values.
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