This work presents a theoretical study of the combined impact of the magnetic field and the correlation between solar irradiance and temperature on the excess minority electron density within the base of a polycrystalline silicon solar cell with parallel junction. The results reveal a gradual decrease in electron density with increasing magnetic field intensity, for various irradiance values, whether coupled with temperature or not. Electron density vanishes at 1.2 mT under constant temperature conditions, and beyond 1.2 mT when temperature varies jointly with irradiance. The electron density is consistently higher under constant temperature than when temperature is coupled with irradiance, a phenomenon attributed to the rise in thermal recombination. While the reduction in carrier density is also explained by the Lorentz force, which facilitates electron confinement and hinders their collection, light intensity conversely stimulates carrier generation, thereby increasing photocurrent density and photovoltage. The irradiance-temperature coupling may induce significant energy losses and should be considered in the design and optimization of photovoltaic cells. Although purely theoretical and pending experimental validation, this study provides valuable insights for refining technical and economic assessments in the development of preliminary solar projects.
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