Changing of Defect’s Structure and Properties of Superhard Nanostructured Ti-Si-N Coatings, Fabricated Using CPVD, before and after Annealing
- 1 Sumy State University, R.-Korsakov, Sumy, Ukraine
- 2 Sumy State University, R.-Korsakov, Sumy, Ukraine
- 3 Kharkov National Technical University, Kharkov, Ukraine
- 4 Kharkov National University, Kharkov, Ukraine
Abstract
Using such unique methods of analysis as slow positron beam (SPB), RBS, μ -PIXE (proton microbeam), XRD, SEM with EDS, XPS, nanohardness and elastic modulus measurements, we studied superhar d nanostructure Ti-Si-N coatings, which were deposited using Cathodic-PVD method, before and after annealing at the temperature of 600 ° C for 30 min utes. It is shown in the paper that redistribution of N and Si occurs on the borders of nanograins after annealing, amor phous phase α -SiN x (Si 3 N 4 ) is created, defects segregates on interfaces and forms vacancy-type clusters with rather high concentration from 5 × 10 16 cm -3 to 7.5 × 10 17 cm -3 due to thermodiffusion. Solid solution (Ti,Si)N and small concentration of α -SiN (close to XRD detection limits) are formed in the coating. Also it was obtained, that deflected mode is formed in the coating (compressive deformation equals to –2.6%), but after thermal annealing deformation reduces to a value of - 2.3%. Size of nanograins of solid solution (Ti, Si)N increases from 12.5 nm to (13.2 ÷ 13.4) nm. 25 nm size grains increase their size to 28.5 nm after annealing (under another deposition regime).
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