Performance of Double-Pole Four-Throw Double-Gate RF CMOS Switch in 45-nm Technology
- 1
Abstract
In this paper, we have investigated the design parameters of RF CMOS switch, which will be used for the wireless tele-communication systems. A double-pole four-throw double-gate radio-frequency complementary-metal-oxide-semicon- ductor (DP4T DG RF CMOS) switch for operating at the 1 GHz is implemented with 45-nm CMOS process technology. This proposed RF switch is capable to select the data streams from the two antennas for both the transmitting and receiving processes. For the development of this DP4T DG RF CMOS switch we have explored the basic concept of the proposed switch circuit elements required for the radio frequency systems such as drain current, threshold voltage, resonant frequency, return loss, transmission loss, VSWR, resistances, capacitances, and switching speed.
- Skyworks Solutions Inc., “Application Note, APN1002, Design with PIN Diodes,” Woburn, July 2005.
- J. Park and Z. Q. Ma, “A 15 GHz CMOS RF Switch Employing Large Signal Impedance Matching,” Proceeding of Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, San Diego, 2006, pp. 1-4.
- V. M. Srivastava, K. S. Yadav and G. Singh, “Application of VEE Pro Software for Measurement of MOS Device Parameter Using C-V Curve,” International Journal of Computer Applications, Vol. 1, No. 7, March 2010, pp. 43-46.
- V. M. Srivastava, “Capacitance-Voltage Measurement for Characterization of a Metal Gate MOS Process,” International Journal of Recent Trends in Engineering, Vol. 1, No. 4, May 2009, pp. 4-7.
- L. E. Microelectron and A. B. Stockholm, “Overlooked Interfacial Silicide-Polysilicon Gate Resistance in MOS Transistors,” IEEE Transactions on Electron Devices, Vol. 48, No. 9, September 2001, pp. 2179-2181.
- J. P. Carmo, P. M. Mendes, C. Couto and J. H. Correia “A 2.4-GHz RF CMOS Transceiver for Wireless Sensor Applications,” Proceeding of International Conference on Electrical Engineering, Coimbra, 2005, pp. 902-905.
- P. Mekanand and D. Eungdamorang, “DP4T CMOS Switch in a Transceiver of MIMO System,” Proceeding of 11th IEEE International Conference of Advanced Communication Technology, Korea, 2009, pp. 472-474.
- P. H. Woerlee, et al, “RF CMOS performance trends,” IEEE Transaction on Electron Devices, Vol. 48, No. 8, August 2001, pp. 1776-1782.
- W. L. Chan et al, “A 60 GHz-Band 1 V, 11.5 dBm Power Amplifier with 11% PAE in 65-nm CMOS,” International Solid State Circuits Conference, San Francisco, 2009, pp. 380-381.
- A. Valdes-Garcia, et al, “60 GHz Transmitter Circuits in 65-nm CMOS,” Radio Frequency Integrated Circuits Symposium, 2008, Atlanta, pp. 641-644.
- Y. Cheng and M. Matloubian, “Frequency Dependent Resistive and Capacitive Components in RF MOSFETs,” IEEE Electron Device Letters, Vol. 22, No. 7, July 2001, pp. 333-335.
- T. H. Lee, “The Design of CMOS Radio-Frequency Integrated Circuits,” 2nd Edition, Cambrige Univrsity Press, New York, 2004.
- R. H. Caverly, S. Smith and J. G. Hu, “RF CMOS Cells for Wireless Applications,” Journal of Analog Integrated Circuits and Signal Processing, Vol. 25, No. 1, 2001, pp. 5-15.
- V. M. Srivastava, K. S. Yadav and G. Singh, “Double Pole Four Throw Switch Design with CMOS Inverter,” Proceeding of 5th IEEE International Conference on Wireless Communication and Sensor Network, 15-19 December 2009, pp. 1-4.