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Capacitive Model and S-Parameters of Double-Pole Four-Throw Double-Gate RF CMOS Switch
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Wireless Engineering and Technology·Volume 02 (2011)·Pages 15–22·Published 30 January 2011·DOI10.4236/wet.2011.21003
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Abstract
In this paper, we have analyzed the Double-Pole Four-Throw Double-Gate Radio-Frequency Complementary Metal-Oxide-Semiconductor (DP4T DG RF CMOS) switch using S-parameters for 1 GHz to 60 GHz of frequency range. DP4T DG RF CMOS switch for operation at high frequency is also analyzed with its capacitive model. The re-sults for the development of this proposed switch include the basics of the circuit elements in terms of capacitance, re-sistance, impedance, admittance, series equivalent and parallel equivalent of this network at different frequencies which are present in this switch whatever they are ON or OFF.
KeywordsCapacitive ModelDouble-Gate MOSFETDP4T SwitchIsolationRadio FrequencyRF SwitchS-Parameter and VLSI
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