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Dynamic Deformation Electron-Phonon Interaction in Disordered Bulk Semiconductor
Aligarh Muslim University, Aligarh, India
Aligarh Muslim University, Aligarh, India
Shibli National Post Graduate College, Azamgarh, India
The Maharaja Sayajirao University of Baroda, Vadodara, India
- 1 Aligarh Muslim University, Aligarh, India
- 2 Aligarh Muslim University, Aligarh, India
- 3 Shibli National Post Graduate College, Azamgarh, India
- 4 The Maharaja Sayajirao University of Baroda, Vadodara, India
World Journal of Condensed Matter Physics·Volume 02 (2012)·Pages 42–46·Published 28 February 2012·DOI10.4236/wjcmp.2012.21007
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Abstract
We present our theoretical investigations on the effects of disorder on the electron-phonon interaction in semiconducting GaAs system. Both the temperature (T) and disorder (electron mean free path l) dependences of the electron-phonon scattering rate have been determined. On consideration of the dynamic screening, we find a significant change in the temperature exponent as well as the pre factor from the earlier reported temperature power law dependence result ?T6 obtained under static screening. Also the dynamic screening makes a noticeable change in the character of the dependence of scattering rate on the mean free path from the static screening result.
KeywordsElectron-Phonon Scattering RateDynamic ScreeningDeformation Potential
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