Intervalley Scattering of Electrons in n-Si at T = 77 ÷ 450 K
- 1 V. Lashkaryov Institute for Semiconductor Physics NAS of Ukraine, Kiev, Ukraine
- 2 V. Lashkaryov Institute for Semiconductor Physics NAS of Ukraine, Kiev, Ukraine
- 3 V. Lashkaryov Institute for Semiconductor Physics NAS of Ukraine, Kiev, Ukraine
- 4 Caspian State University, Aktau, Kazakhtan
Abstract
The change in electron mobility of n-Si with increasing the temperature which may be due to the inclusion of gLO phonon energy of 720 K, is presented. Under orientation of the uniaxial pressure X//[110]//J, g-transitions are attached in the directions [100] and [010]. The f-transitions are not completely removed from valleys located in the plane (100). In this case, there is no change in the slope of the dependence log ρ vs. log T for the temperature range 77 to 450 K. So, no appreciable contribution of g-transitions to intervalley scattering occurs, while the observed is the decisive role of f - transitions to intervalley scattering. The results of measuring of the tensoresistivity effect for n-Si crystals under X//[001]//J are presented at these temperatures too.
- P. I. Baranskii, I. V. Dakhovskii, V. V. Kolomoets, et al., “Intervalley Scattering in n-Si for Temperature Range 78-300 K,” Semiconductors, Vol. 10, No. 8, 1976, pp. 1480-1482.
- E. Pop, R. Dutton and K. E. Goodson, “Analytic Band Monte Carlo Model for Electron Transport in Si including Acoustic and Optical Phonon Dispersion,” Journal of Applied Physics, Vol. 96, No. 9, 2004, pp. 4998-5005. doi:10.1063/1.1788838
- A. Sergeev, M. Y. Reizer and V. Mitin, “Deformation Electron-Phonon Coupling in Disordered Semiconductors and Nanostructures,” Physical Review Letters, Vol. 94, No. 13, 2005, Article ID: 136602. doi:10.1103/PhysRevLett.94.136602
- M. Ashe and O. G. Sarbei, “Electron-Phonon Interaction in n-Si,” Physica Status Solidi B, Vol. 103, No. 1, 1981, pp. 11-50. doi:10.1002/pssb.2221030102
- S. Zollner, J. Kircher, M. Cardona and S. Gopalan, “Are Transverse Phonons Important for Γ-X-Intervalley Scattering?” Solid-State Electron, Vol. 32, No. 12, 1989, pp. 1585-1589. doi:10.1016/0038-1101(89)90278-5
- S. Sinha, P. K. Schelling, S. R. Phillpot and K. E. Goodson, “Scattering of g-Process Longitudinal Optical Phonons at Hotspots in Silicon,” Journal of Applied Physics, Vol. 97, No. 2, 2005, Article ID: 023702. doi:10.1063/1.1831549
- R. Brunetti, C. Jacoboni, F. Nava, L. Reggiani, G. Bosman, et al., “Diffusion Coefficient of Electrons in Silicon,” Journal of Applied Physics, Vol. 52, No. 11, 1981, pp. 67136722. doi:10.1063/1.328622
- S. Thompson, et al., “A 90 nm Logic Technology Featuring 50 nm Strained Silicon Channel Transistors, 7 Layers of Cu Interconnects, Low k ILD, and 1 um2 SRAM Cell,” IEEE International Electron Devices Meeting, IEDM Technical Digest, San Francisco, December 2002, pp. 61-64.
- T. Ghani, et al., “A 90nm High Volume Manufacturing Logic Technology Featuring Novel 45nm Gate Length Strained Silicon CMOS Transistors,” IEEE International Electron Devices Meeting, IEDM Technical Digest, Washington, 8-10 December 2003, pp. 978-980.
- V. V. Kolomoets, V. N. Ermakov, B. A. Suss and V. E. Rodionov, “Installation for High Uniaxial Stress Generation,” Russian Patent No. 2040785, 1995.