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The Effect of the MeV Si-Ion Irradiation on the Photoluminescence of Silicon Nanocrystals
Instituto de Física, Universidad Nacional Autónoma de México, México D.F., México
- 1 Instituto de Física, Universidad Nacional Autónoma de México, México D.F., México
World Journal of Condensed Matter Physics·Volume 03 (2013)·Pages 119–124·Published 23 May 2013·DOI10.4236/wjcmp.2013.32019
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Abstract
Silicon nanocrystals embedded in silicon nitride films were irradiated with Si - ions at 8 MeV in order to modify their optical response. The samples were characterized by means of Rutherford Backscattering Spectrometry, Elastic Recoil Detection Analysis, High-Resolution Transmission Electronic Microscopy and Photoluminescence analysis. It was found a blue-shift in the photoluminescence emission from the as-grown films after they were irradiated with high en ergetic silicon ions. According to the quantum confinement theory, this fact is related to a decrease in size of the silicon nanocrystals, which means that a higher silicon fluence irradiation is related with a diminishing in silicon nanocrystal size.
KeywordsSilicon NitrideSilicon NanocrystalsPhotoluminescenceRBSERDA
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