Influence of Iodine Pressure on the Growth of CuIn<sub>1-x</sub>Ga<sub>x</sub>Se<sub>2</sub> Thin Films Obtained by Close-Spaced Vapor Transport “CSVT”
- 1 Department of Physics, Faculty of Sciences II, Lebanese University, Jdeidet, Lebanon
- 2 Department of Physics, Faculty of Sciences II, Lebanese University, Jdeidet, Lebanon
- 3 Department of Physics, Faculty of Sciences II, Lebanese University, Jdeidet, Lebanon
- 4 Department of Physics, Faculty of Sciences II, Lebanese University, Jdeidet, Lebanon; Centre Electronique et Micro-Opto- électronique de Montpellier (CEM2), Faculté Sciences et Techniques du Languedoc, Université de Montpellier II, Montpellier, France
Abstract
We present the results concerning photovoltaic materials CuIn 1-x Ga x Se 2 thin films, which were obtained by close- spaced vapor transport “CSVT”. The influence of the iodine pressure on the growth of CuIn 1-x Ga x Se 2 thin films was studied. The thin films were characterized by Energy Dispersive Spectrometry (EDS), Scanning Electron Microscope (SEM), hot point probe method, X-Ray Diffraction (XRD), Photoluminescence, and Optical response (Photoconductiv ity). At high pressure, the deposition rate was very important. The films were relatively thick and homogeneous with large grains dimensions. These films are formed of crystals placed in a preferential orientation depending on the plan (112). At low pressure, the films were thin and inhomogeneous with relatively small grains. These films of crystals didn’t have preferential orientation.
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