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The Temperature Dependence of the Density of States in Semiconductors
Namangan Engineering Pedagogical Institute, Namangan, Uzbekistan
Namangan Engineering Pedagogical Institute, Namangan, Uzbekistan; Namangan Engineering Institute of Technology, Namangan, Uzbekistan
Namangan Engineering Pedagogical Institute, Namangan, Uzbekistan
- 1 Namangan Engineering Pedagogical Institute, Namangan, Uzbekistan
- 2 Namangan Engineering Pedagogical Institute, Namangan, Uzbekistan; Namangan Engineering Institute of Technology, Namangan, Uzbekistan
- 3 Namangan Engineering Pedagogical Institute, Namangan, Uzbekistan
World Journal of Condensed Matter Physics·Volume 03 (2013)·Pages 216–220·Published 14 October 2013·DOI10.4236/wjcmp.2013.34036
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Abstract
The temperature dependence of the density of energy states in semiconductors is considered. With the help of mathematical modeling of the thermal broadening of the energy levels, the temperature dependence of the band gap of semiconductors is studied. In view of the non-parabolic and the temperature dependence of the effective mass of the density of states in the allowed bands, graphs of temperature dependence of the band gap are obtained. The theoretical results of mathematical modeling are compared with experimental data for Si, InAs and solid solutions of p - Bi 2- x Sb x Te 3- y Se y . The theoretical results satisfactorily explain the experimental results for Si and InAs. The new approach is investigated by the temperature dependence of the band gap of semiconductors.
KeywordsBand GapThe Effective Mass Density of StatesThe Energy SpectrumThe Numerical Simulation and Experiment
- B. Ridley, “Quantum Processes in Semiconductors,” Clarendon Press, Oxford, 1982.
- R. Passler, “Semi-Empirical Descriptions of Temperature Dependences of Band Gaps in Semiconductors,” Physica Status Solidi (b), Vol. 236, No. 3, 2003, pp. 710-728. http://dx.doi.org/10.1002/pssb.200301752
- G. Gulyamov and N. Yu. Sharibaev, “Determination of the Density of Surface States at the Semiconductor-Insulator Interface in a Metal-Insulator-Semiconductor Structure,” FTP (Fizika Technika Poluprovodnikov), Vol. 45, No. 2, 2011, pp. 178-182.
- G. Gulyamov and N. Yu. Sharibaev, “Determination of the Discrete Spectrum of Surface State Density in MOSStructures Al-SiO2-Si Irradiated by Neutrons,” Poverkhnost’. Rentgenovskie, Sinkhrotronnye i Neitronnye Issledovaniya, No. 9, 2012, pp. 13-17.
- G. Gulyamov, N. Yu. Sharibaev and U. I. Erkaboev, “Thermal Broadening Density of States and Temperature Dependence of the Band Gap Ge,” FIP (Fyzicheckaya Injeneriya Poverkhnosti), Vol. 10, No. 4, 2012, pp. 366-370.
- G. Gulyamov and N. Yu. Sharibaev, “Temperature Dependence of the Band Gap of Si and Due to the Thermal Broadening of the Density of States of,” FIP (Fyzicheckaya Injeneriya Poverkhnosti), Vol. 10, No. 2, 2012, pp. 4-8.
- G. Gulyamov, I. N. Karimov, N. Yu. Sharibaev and U. I. Erkaboev, “Determination of the Density of Surface States at the Semiconductor-Insulator Structures in Al-SiO2-Si and Al-SiO2-n-Si at Low Temperatures,” Uzbek Journal of Physic, Vol. 12, No. 3, 2010, pp. 143-146.
- G. Gulyamov, N. Yu. Sharibaev and U. I. Erkaboev, “Influence Effective Mass Density of States at Temperature Dependence of Band Gap in Solid Solutions p-Bi2-xSbxTe3-ySey,” FIP (Fyzicheckaya Injeneriya Poverkhnosti), Vol. 11, No. 2, 2013, pp. 195-198.
- L. N. Lukyanova, V. Kutasov and P. Konstantinov, “Effective Mass and Mobility in Solid p-Bi2-xSbxTe3-ySey for Temperatures <300K,” Solid State, Vol. 47, No. 2, 2005, pp. 224-228.
- N. Mott and E. Devis, “Electronic Processes in Non-Crystalline Materials,” 2nd Edition, Clarendon Press, Oxford, 1982.
- V. B. Bonch-Bruyevich, et al., “Electronic Theory of NonCrystalline Semiconductors,” Nauka, Moscow, 1981.
- A. I. Anselm, “Introduction to Semiconductor,” Nauka, Moscow, 1978.
- K. V. Shalimova, “Physics of Semiconductors,” Energoatomizdat, Moscow, 1985.